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dg758bx45 1/19 applications n variable speed a.c. motor drive inverters (vsd-ac). n uninterruptable power supplies n high voltage converters. n choppers. n welding. n induction heating. n dc/dc converters. features n double side cooling. n high reliability in service. n high voltage capability. n fault protection without fuses. n high surge current capability. n turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements. key parameters i tcm 3000a v drm 4500v i t(av) 870a dv d /dt 1000v/ m s di t /dt 300a/ m s outline type code: x. see package details for further information. voltage ratings 4500 dg758bx45 conditions type number t vj = 125 o c, i dm = 100ma, i rrm = 50ma repetitive peak off-state voltage v drm v repetitive peak reverse voltage v rrm v 16 current ratings symbol parameter conditions max. i tcm t hs = 80 o c. double side cooled. half sine 50hz. v d = 66% v drm , t j = 125 o c, di gq /dt = 40a/ m s, cs = 6 m f rms on-state current a a a 3000 870 1365 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled. half sine 50hz. i t(rms) i t(av) mean on-state current dg758bx45 gate turn-off thyristor ds4095-7 july 2014 (ln31734)
dg758bx45 2/19 surge ratings conditions 16.0 1.28 x 10 6 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 300 100 v/ m s max. units rate of rise of off-state voltage dv d /dt 1000 v/ m s to 66% v drm ; v rg = -2v, t j = 125 o c i tsm symbol parameter i 2 t v d = 3000v, i t = 3000a, t j = 125 o c, i fg > 40a, rise time > 1.0 m s a/ m s to 66% v drm ; r gk 1.5 w , t j = 125 o c gate ratings symbol parameter conditions v units max. 16 20 min. - - - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 24 60 -50 30 - - m s 100 100 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) m s a/ m s kw w a thermal ratings and mechanical data symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - - 0.0392 - 0.0036 o c/w per contact cathode side cooled double side cooled units - 0.0146 o c/w anode side cooled o c/w 0.0233 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force -40 125 37.0 33.0 -40 kn o c/w clamping force 35.0kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c - peak stray inductance in snubber circuit l s 200 nh
dg758bx45 3/19 characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50- turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge peak reverse gate current - 10000 v rgm = 16v, no gate/cathode resistor m c i t = 3000a, v dm = 3000v snubber cap cs = 6.0 m f, di gq /dt = 40a/ m s t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt i gqm min. max. units - 4.0 v v drm = 4500v, v rg = 0v - 100 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 1.2 v v d = 24v, i t = 100a, t j = 25 o c - 3.5 a ma mj 3000 - v d = 2250v i t = 3000a, di t /dt = 300a/ m s i fg = 40a, rise time < 1.0 m s m s 1.5- - 3.0 m s - 6300 mj - 20.6 m s m s 2.2- m s 22.8- - 20000 m c - 830 a at 3000a peak, i g(on) = 8a d.c.
dg758bx45 4/19 curves 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 instantaneous on-state voltage - (v) 1000 2000 3000 4000 5000 instantaneous on-state current - (a) fig 2 maximum limit on state characteristics t j = 125c t j = 25c measured under pulse conditions i g(on) = 8a 0 5.5 -50 -25 0 25 50 75 100 125 0.5 1.0 1.5 2.0 gate trigger voltage v gt - (v) 8.0 6.0 4.0 2.0 0 gate trigger current i gt - (a) junction temperature t j - (c) v gt i gt 0 fig.1 maximum gate trigger voltage/current vs junction temperature fig.2 on-state characteristics
dg758bx45 5/19 0 1.0 2.0 3.0 4.0 5.0 6.0 snubber capacitance cs - (f) 0 500 1000 1500 2000 2500 3000 maximum permissible turn-off current i tcm - (a) conditions: t j = 125c, v dm = 2000v di gq /dt = 40a/s 0 0.005 0.010 0.015 0.020 0.001 0.01 0.1 1.0 10 time - s thermal impedance - c/w dc 0.0001 0.001 0.01 0.1 1.0 pulse duration - ( ms ) 0 10 20 30 40 peak half sine wave on-state current - (ka) fig.3 maximum dependence of i tcm on c s fig.4 maximum (limit) transient thermal impedance - double side cooled fig.5 surge (non-repetitive) on-state current vs time
dg758bx45 6/19 0 200 400 600 800 1000 1200 1400 65 70 80 90 100 110 maximum permissible case temperature - (c) mean on-state current - (a) 0 500 1000 1500 2000 2500 3000 3500 4000 mean on-state power dissipation - (w) 180 120 60 30 dc conditions; i g(on) = 8a 120 130 0 100 200 300 400 500 700 800 900 80 100 120 140 maximum permissible case temperature - ( c ) mean on-state current - (a) 0 500 1000 1500 2000 2500 3000 mean on-state power dissipation- (w) 180 120 60 30 90 conditions; i g(on) = 8a 600 fig.6 steady state rectangluar wave conduction loss - double side cooled fig.7 steady state sinusoidal wave conduction loss - double side cooled
dg758bx45 7/19 0 500 1000 1500 2000 2500 on-state current - (a) 0 250 500 750 1000 1250 1500 1750 2000 turn-on energy loss e on - (mj) 3000 2250 v d = 2250v v d = 1500v v d = 750v conditions: t j = 25c i fgm = 40a cs = 6f rs = 4.4 ohms di/dt = 300a/s 0 1020304050607080 peak forward gate current i fgm - (a) 500 750 1000 1250 1500 1750 2000 2250 2500 turn-on energy loss e on - (mj) conditions: i t = 3000a, t j = 25c cs = 6f, rs = 4.4 ohms, di t /dt = 300a/s v d = 2250v v d = 1500v v d = 750v fig.8 turn-on energy vs on-state current fig.9 turn-on energy vs peak forward gate current
dg758bx45 8/19 0 1020304050607080 peak forward gate current i fgm - (a) 500 750 1000 1250 1500 1750 2000 2250 2500 turn-on energy loss e on - (mj) 2750 3000 conditions: i t = 3000a, t j = 125c cs = 6f, rs = 4.4, di t /dt = 300a/s, di fg /dt = 40a/s v d = 2250v v d = 1500v v d = 750v 3250 3500 0 50 100 150 200 250 300 rate of rise of on-state current di t/dt - (a/s) 0 500 1000 1500 2000 turn-on energy loss e on - (mj) 3000 conditions: i t = 3000a t j = 125c cs = 6f rs = 4.4 ohms i fgm = 40a v d = 2250v 2500 v d = 1500v v d = 750v 0 500 1000 1500 2000 3000 2500 on-state current - (a) 0 500 1000 1500 2000 2500 3000 turn-on energy loss e on - (mj) conditions: t j = 125c, i fgm = 40a cs = 6f, rs = 4.4 di t /dt = 300a/s di fg /dt = 40a/s v d = 1500v v d = 2250v v d = 750v fig.10 turn-on energy vs on-state current fig.11 turn-on energy vs peak forward gate current fig.12 turn-on energy vs rate of rise of on-state current
dg758bx45 9/19 0 500 1000 1500 2000 3000 2500 on-state current - (a) 0 0.5 1.0 1.5 2.0 2.5 3.0 turn-on delay time and rise time - ( s) t r t d conditions: t j = 125c, i fgm = 40a cs = 6f, rs = 4.4, di t /dt = 300a/s, v d = 2250v, di fg /dt = 40a/s 0 1020304050607080 peak forward gate current i fgm - (a) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 turn-on delay time and rise time - ( s) 4.5 5.0 conditions: i t = 3000a t j = 125c cs = 6f rs = 4.4 di t /dt = 300a/s v d = 2250v di fg /dt = 40a/s t d t r fig.13 delay time & rise time vs turn-on current fig.14 delay time & rise time vs peak forward gate current
dg758bx45 10/19 0 500 1000 1500 2000 3000 2500 on-state current - (a) 0 0.5 1.0 1.5 2.0 2.5 3.0 turn-off energy loss e off - (j) conditions: t j = 25c cs = 6f di gq /dt = 40a/s 3.5 4.0 v dm = 1000v v dm = 2000v v dm = 3000v 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 turn-off energy per pulse e off - (j) 3.8 4.0 conditions: i t = 3000a t j = 25c cs = 6f v dm = 3000v v dm = 2000v v dm = 1000v fig.15 turn-off energy vs on-state current fig.16 turn-off energy vs rate of rise of reverse gate current
dg758bx45 11/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt- (a/s) 3.0 4.0 5.0 6.0 7.0 turn-off energy per pulse e off - (j) conditions: i t = 3000a t j = 125c cs = 6f v dm = 1000v v dm = 2000v v dm = 3000v 0 500 1000 1500 2000 2500 3000 on-state current - (a) 0 1.0 2.0 3.0 4.0 5.0 6.0 turn-off energy loss e off - (j) conditions: t j = 125c cs = 6f di gq /dt = 40a/s v dm = 2000v 7.0 v dm = 3000v v dm = 1000v fig.17 turn-off energy vs on-state current fig.18 turn-off energy loss vs rate of rise of reverse gate current
dg758bx45 12/19 0 500 1000 1500 2000 2500 3000 on-state current - (a) 0 1.0 2.0 3.0 4.0 5.0 6.0 turn-off energy per pulse e off - (j) conditions: t j = 125c v dm = 2000v di gq /dt = 40a/s cs = 6.0f cs = 4.0f cs = 2.0f cs = 1.0f 0 500 1000 1500 2000 2500 3000 on-state current - (a) 0 5 10 15 gate storage time t gs - (s) conditions: cs = 6f di gq /dt = 40a/s t j = 25c t j = 125c 20 25 fig.19 turn-off energy vs on-state current fig.20 gate storage time vs on-state current
dg758bx45 13/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 5 10 15 20 25 gate storage time t gs - (s) 30 conditions: i t = 3000a cs = 6f t j = 125c t j = 25c 0 500 1000 1500 2000 2500 3000 on-state current - (a) 1.0 1.5 2.0 2.5 gate fall time t gf - (s) conditions: cs = 6f di gq /dt = 40a/s t j = 125c t j = 25c 0.5 fig.21 gate storage time vs rate of rise of reverse gate current fig.22 gate fall time vs on-state current
dg758bx45 14/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 0.5 1.00 1.5 2.0 2.5 gate fall time t gf - (s) conditions: i t = 3000a cs = 6f t j = 125c t j = 25c 0 500 1000 1500 2000 2500 3000 on-state current - ( a ) 100 300 500 700 peak reverse gate current i gqm - (a) conditions: cs = 6f di gq /dt = 40a/s t j = 125c t j = 25c 900 800 600 400 200 fig.23 gate fall time vs rate of rise of reverse gate current fig.24 peak reverse gate current vs turn-off current
dg758bx45 15/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 500 600 700 800 900 peak reverse gate current i gqm - (a) 1000 conditions: i t = 3000a cs = 6f t j = 125c t j = 25c 0 500 1000 1500 2000 2500 3000 on-state current - (a) 0 2.5 5.0 7.5 total turn-off charge q gq - (mc) conditions: cs = 6f di gq /dt = 40a/s t j = 125c t j = 25c 10.0 fig.25 peak reverse gate current vs rate of rise of reversegate current fig.26 turn-off gate charge vs on-state current
dg758bx45 16/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 5.0 7.5 10.0 12.5 15.0 turn-off gate charge q gq - (mc) conditions: i t = 3000a cs = 6f t j = 125c t j = 25c 0 500 1000 rate of rise of off-state voltage dv/dt - (v/s) gate cathode resistance r gk - (ohms) v d = 3000v v d = 2250v 0.1 1.0 10 100 1000 t j = 125c fig.27 turn-off gate charge vs rate of rise of reverse gate current fig.28 rate of rise of off-state voltage vs gate cathode resistance
dg758bx45 17/19 anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq recommended gate condition: i tcm = 3000a i fg = 40a i g(on) = 8a d.c. t w1(min) = 10s i gqm = 830a di gq /dt = 40a/s q gq = 10000c v rg(min) = 2v v rg(max) = 16v these are recommended mitel semiconductor conditions. other conditions are permitted according to users gate drive specifications. fig.29 general switching waveforms
dg758bx45 18/19 package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwise. do not scale. 63 max 2 holes ?3.60 0.05 x 2.0 0.1 deep (one in each electrode). 26.0 0.5 63 max 9.6 15 anode cathode ?66 ?112 max ?70 nominal weight: 1200g clamping force: 35kn 10% lead coaxial, length: 600mm package outine type code: x associated publications title application note number calculating the junction temperature or power semiconductors an4506 gto gate drive units an4571 recommendations for clamping power semiconductors an4839 use of v to , r t on-state characteristic an5001 impoved gate drive for gto series connections an5177
important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .

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